IPD65R420CFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 8.7A TO252-3
$1.50
Available to order
Reference Price (USD)
2,500+
$0.87556
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD65R420CFDATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPD65R420CFDATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMT67M8LSS-13
onsemi
BFL4037-1E
Motorola
MTB4N40ET4
Infineon Technologies
AUIRF2804S
onsemi
NTMJS1D5N04CLTWG
Panasonic Electronic Components
MTM982400BBF
onsemi
MTW8N50E
Infineon Technologies
IRF1010ZSPBF
Nexperia USA Inc.
BUK7Y72-80EX
Infineon Technologies