IPW65R070C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 53.5A TO247-3
$12.87
Available to order
Reference Price (USD)
1+
$11.02000
10+
$9.92100
240+
$8.15750
720+
$6.83467
1,200+
$5.95278
Exquisite packaging
Discount
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Meet the IPW65R070C6FKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPW65R070C6FKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 17.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.76mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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