SSM6J422TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 4A UF6
$0.11
Available to order
Reference Price (USD)
1+
$0.10890
500+
$0.107811
1000+
$0.106722
1500+
$0.105633
2000+
$0.104544
2500+
$0.103455
Exquisite packaging
Discount
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The SSM6J422TU,LF from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's SSM6J422TU,LF for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
- Vgs (Max): +6V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
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