IRFBE30LPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 4.1A I2PAK
$2.99
Available to order
Reference Price (USD)
1+
$3.23000
10+
$2.92600
100+
$2.36900
500+
$1.86300
1,000+
$1.55940
3,000+
$1.45820
5,000+
$1.40760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRFBE30LPBF by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFBE30LPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Infineon Technologies
IPP65R110CFD7XKSA1
Fairchild Semiconductor
FDZ7064S
Infineon Technologies
BSZ130N03LSGATMA1
onsemi
FDMT80040DC
Vishay Siliconix
IRFP260PBF
Infineon Technologies
IRF8113TRPBF
Vishay Siliconix
IRFR9220TRPBF-BE3
PN Junction Semiconductor
P3M12025K3
Infineon Technologies
IAUT300N08S5N012ATMA2
Alpha & Omega Semiconductor Inc.