IXTH32P20T
IXYS
IXYS
MOSFET P-CH 200V 32A TO247
$7.81
Available to order
Reference Price (USD)
30+
$6.15000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXTH32P20T by IXYS is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose IXYS for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Transphorm
TPH3206PS
Diodes Incorporated
ZVP2106GTA
onsemi
FQD4P25TM-WS
Rohm Semiconductor
RCX120N20
Renesas Electronics America Inc
2SJ243-T1-A
Fairchild Semiconductor
FQPF9N25CT
STMicroelectronics
STP12NM50FP
onsemi
NTMFS4H02NFT3G
Toshiba Semiconductor and Storage
TK10A80E,S4X
Rectron USA