IXYH50N120C3D1
IXYS
IXYS
IGBT 1200V 90A 625W TO247
$13.33
Available to order
Reference Price (USD)
1+
$11.81000
10+
$10.63100
30+
$9.68633
120+
$8.74125
270+
$8.03252
510+
$7.32375
1,020+
$6.37875
Exquisite packaging
Discount
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The IXYH50N120C3D1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXYH50N120C3D1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXYH50N120C3D1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 210 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
- Power - Max: 625 W
- Switching Energy: 3mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 142 nC
- Td (on/off) @ 25°C: 28ns/133ns
- Test Condition: 600V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 195 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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