MAPR-000912-500S00
MACOM Technology Solutions

MACOM Technology Solutions
RF TRANS NPN 80V
$759.26
Available to order
Reference Price (USD)
1+
$657.85000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the MAPR-000912-500S00, a high-efficiency Bipolar Junction Transistor (BJT) from MACOM Technology Solutions. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The MAPR-000912-500S00 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose MACOM Technology Solutions for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 80V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 9.44dB ~ 9.77dB
- Power - Max: 500W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 52.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -