MJ10022
Solid State Inc.
Solid State Inc.
TRANS NPN DARL 350V 40A TO3
$5.27
Available to order
Reference Price (USD)
1+
$5.26700
500+
$5.21433
1000+
$5.16166
1500+
$5.10899
2000+
$5.05632
2500+
$5.00365
Exquisite packaging
Discount
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Enhance your circuit designs with the MJ10022 Bipolar Junction Transistor (BJT) from Solid State Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The MJ10022 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Solid State Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 40 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 40A
- Current - Collector Cutoff (Max): 250µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V
- Power - Max: 250 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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