MSC080SMA120S
Microchip Technology
Microchip Technology
SICFET N-CH 1200V 35A D3PAK
$12.52
Available to order
Reference Price (USD)
1+
$12.52000
500+
$12.3948
1000+
$12.2696
1500+
$12.1444
2000+
$12.0192
2500+
$11.894
Exquisite packaging
Discount
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Meet the MSC080SMA120S by Microchip Technology, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The MSC080SMA120S stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Microchip Technology.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 35A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D3PAK
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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