NTE15
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 19V 1.1GHZ 3SIP
$1.46
Available to order
Reference Price (USD)
1+
$1.46000
500+
$1.4454
1000+
$1.4308
1500+
$1.4162
2000+
$1.4016
2500+
$1.387
Exquisite packaging
Discount
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The NTE15 RF Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust NTE Electronics, Inc for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 19V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: 3-SIP
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