NTMJS2D5N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 3.9A/113A 8LFPAK
$3.71
Available to order
Reference Price (USD)
1+
$3.71055
500+
$3.6734445
1000+
$3.636339
1500+
$3.5992335
2000+
$3.562128
2500+
$3.5250225
Exquisite packaging
Discount
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Enhance your electronic projects with the NTMJS2D5N06CLTWG single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NTMJS2D5N06CLTWG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 113A (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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