NX6008NBKR
Nexperia USA Inc.
Nexperia USA Inc.
NX6008NBK/SOT23/TO-236AB
$0.23
Available to order
Reference Price (USD)
1+
$0.23000
500+
$0.2277
1000+
$0.2254
1500+
$0.2231
2000+
$0.2208
2500+
$0.2185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NX6008NBKR from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NX6008NBKR ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Alpha & Omega Semiconductor Inc.
AON6510
Infineon Technologies
IPT60R075CFD7XTMA1
IXYS
IXTH80N65X2
Taiwan Semiconductor Corporation
TSM60NB099PW C1G
Vishay Siliconix
SI8823EDB-T2-E1
Vishay Siliconix
SQJQ112ER-T1_GE3
Fairchild Semiconductor
IRFW730BTMNL
Vishay Siliconix
IRFS11N50ATRLP
Infineon Technologies
BSZ065N03LSATMA1
Diodes Incorporated