PBSS4350SS,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2NPN 50V 2.7A 8SO
$0.00
Available to order
Reference Price (USD)
1,000+
$0.22117
2,000+
$0.20166
5,000+
$0.18865
10,000+
$0.18214
Exquisite packaging
Discount
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The PBSS4350SS,115 BJT Array from Nexperia USA Inc. brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The PBSS4350SS,115 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 2.7A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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