PJA3415AE_R1_00001
Panjit International Inc.
Panjit International Inc.
SOT-23, MOSFET
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJA3415AE_R1_00001 by Panjit International Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Panjit International Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
NVBG020N090SC1
Infineon Technologies
IRFSL7430PBF
Alpha & Omega Semiconductor Inc.
AOD4130
Renesas Electronics America Inc
2SJ387L-E
Vishay Siliconix
SIDR220DP-T1-RE3
Nexperia USA Inc.
BUK7M9R5-40HX
IXYS
IXFP130N10T2
Infineon Technologies
IRFP150NPBF
Vishay Siliconix
SQ9407EY-T1_GE3
Fairchild Semiconductor