PJQ4443P_R2_00001
Panjit International Inc.
Panjit International Inc.
40V P-CHANNEL ENHANCEMENT MODE M
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ4443P_R2_00001 by Panjit International Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Panjit International Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 59.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
Related Products
Texas Instruments
CSD18511KCS
onsemi
FQB9P25TM
Rohm Semiconductor
R6535KNZ4C13
Fairchild Semiconductor
SSS6N70A
Diodes Incorporated
ZVN3320ASTOA
Vishay Siliconix
SI7738DP-T1-E3
Infineon Technologies
IPDD60R190G7XTMA1
Renesas Electronics America Inc
2SK1566-E
Nexperia USA Inc.
PH7030AL,115
Vishay Siliconix