PSMN4R3-80PS,127
NXP Semiconductors
NXP Semiconductors
NEXPERIA PSMN4R3-80PS - 120A, 80
$1.55
Available to order
Reference Price (USD)
1+
$3.12000
50+
$2.51380
100+
$2.26240
500+
$1.75964
1,000+
$1.45799
Exquisite packaging
Discount
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Optimize your power electronics with the PSMN4R3-80PS,127 single MOSFET from NXP Semiconductors. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the PSMN4R3-80PS,127 combines cutting-edge technology with NXP Semiconductors's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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