PXN8R3-30QLJ
Nexperia USA Inc.
Nexperia USA Inc.
PXN8R3-30QL/SOT8002/MLPAK33
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
Discount
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Upgrade your designs with the PXN8R3-30QLJ by Nexperia USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PXN8R3-30QLJ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
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