RF4E080GNTR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 8A HUML2020L8
$0.50
Available to order
Reference Price (USD)
3,000+
$0.13950
6,000+
$0.13050
15,000+
$0.12600
Exquisite packaging
Discount
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Optimize your power electronics with the RF4E080GNTR single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RF4E080GNTR combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 17.6mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HUML2020L8
- Package / Case: 8-PowerUDFN
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