RGS00TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
ROHM'S IGBT PRODUCTS WILL CONTRI
$5.49
Available to order
Reference Price (USD)
1+
$4.32000
10+
$3.87900
25+
$3.66760
100+
$3.17850
450+
$3.01551
900+
$2.70580
1,350+
$2.28200
Exquisite packaging
Discount
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Upgrade your power management systems with the RGS00TS65DHRC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGS00TS65DHRC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGS00TS65DHRC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 88 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 326 W
- Switching Energy: 1.46mJ (on), 1.29mJ (off)
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 36ns/115ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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