RGW40TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 20A FIELD STOP TRENCH IGBT
$5.45
Available to order
Reference Price (USD)
1+
$5.45000
500+
$5.3955
1000+
$5.341
1500+
$5.2865
2000+
$5.232
2500+
$5.1775
Exquisite packaging
Discount
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The RGW40TS65DGC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGW40TS65DGC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGW40TS65DGC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
- Power - Max: 136 W
- Switching Energy: 330µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 59 nC
- Td (on/off) @ 25°C: 33ns/76ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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