RJ1G12BGNTLL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 40V 120A LPTL
$5.06
Available to order
Reference Price (USD)
1+
$5.06000
500+
$5.0094
1000+
$4.9588
1500+
$4.9082
2000+
$4.8576
2500+
$4.807
Exquisite packaging
Discount
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The RJ1G12BGNTLL from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's RJ1G12BGNTLL for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.86mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTL
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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