SGP5N60RUFDTU
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
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Optimize your power systems with the SGP5N60RUFDTU Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the SGP5N60RUFDTU delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 15 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 5A
- Power - Max: 60 W
- Switching Energy: 88µJ (on), 107µJ (off)
- Input Type: Standard
- Gate Charge: 16 nC
- Td (on/off) @ 25°C: 13ns/34ns
- Test Condition: 300V, 5A, 40Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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