STGW80V60DF
STMicroelectronics
STMicroelectronics
IGBT 600V 120A 469W TO247
$7.51
Available to order
Reference Price (USD)
1+
$7.71000
30+
$6.72000
120+
$5.91000
510+
$5.22000
1,020+
$4.62000
Exquisite packaging
Discount
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Enhance your electronic projects with the STGW80V60DF Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGW80V60DF ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGW80V60DF for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 1.8mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 448 nC
- Td (on/off) @ 25°C: 60ns/220ns
- Test Condition: 400V, 80A, 5Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Exposed Pad
- Supplier Device Package: TO-247
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