SH8M24GZETB
Rohm Semiconductor
Rohm Semiconductor
4V DRIVE NCH+PCH MOSFET. COMPLEX
$1.38
Available to order
Reference Price (USD)
1+
$1.38000
500+
$1.3662
1000+
$1.3524
1500+
$1.3386
2000+
$1.3248
2500+
$1.311
Exquisite packaging
Discount
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The SH8M24GZETB from Rohm Semiconductor is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SH8M24GZETB provides reliable performance in demanding environments. Choose Rohm Semiconductor for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 45V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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