SQD100N03-3M2L_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 100A TO252AA
$1.96
Available to order
Reference Price (USD)
2,000+
$0.74250
6,000+
$0.71500
10,000+
$0.70000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQD100N03-3M2L_GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SQD100N03-3M2L_GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Panasonic Electronic Components
MTM761230LBF
Fairchild Semiconductor
FQI9N50TU
EPC
EPC2202
Rohm Semiconductor
RJ1G12BGNTLL
STMicroelectronics
STU7N80K5
IXYS
IXFX140N30P
Vishay Siliconix
SQS460ENW-T1_GE3
Nexperia USA Inc.
BUK964R8-60E,118
IXYS
IXTT2N300P3HV
Fairchild Semiconductor