SQJ123ELP-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE P-CHANNEL 12 V (D-S)
$1.66
Available to order
Reference Price (USD)
1+
$1.66000
500+
$1.6434
1000+
$1.6268
1500+
$1.6102
2000+
$1.5936
2500+
$1.577
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQJ123ELP-T1_GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 11680 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Vishay Siliconix
SI2301CDS-T1-GE3
Rohm Semiconductor
RUR020N02TL
Infineon Technologies
IRF100P219AKMA1
Vishay Siliconix
SQJ461EP-T1_GE3
Vishay Siliconix
IRLR120PBF
onsemi
NTBGS4D1N15MC
onsemi
FDP61N20
Toshiba Semiconductor and Storage
TK7R7P10PL,RQ
Vishay Siliconix
SIR158DP-T1-RE3
Fairchild Semiconductor