Shopping cart

Subtotal: $0.00

SQJ461EP-T1_GE3

Vishay Siliconix
SQJ461EP-T1_GE3 Preview
Vishay Siliconix
MOSFET P-CH 60V 30A PPAK SO-8
$3.05
Available to order
Reference Price (USD)
3,000+
$1.50575
6,000+
$1.45350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 14.4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4710 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Related Products

Vishay Siliconix

IRLR120PBF

Toshiba Semiconductor and Storage

TK7R7P10PL,RQ

Vishay Siliconix

SIR158DP-T1-RE3

Fairchild Semiconductor

IRFW720BTM

NXP Semiconductors

BUK7Y20-30B,115

Microchip Technology

APT1003RSFLLG/TR

Nexperia USA Inc.

PSMN3R0-30MLC,115

Vishay Siliconix

SIHB12N60ET5-GE3

Top