STGW60H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 80A 375W TO-247
$3.77
Available to order
Reference Price (USD)
1+
$5.62000
30+
$4.82400
120+
$4.22883
510+
$3.65337
1,020+
$3.13740
2,520+
$3.00510
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGW60H65DFB Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGW60H65DFB ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGW60H65DFB into your projects for superior results.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 1.09mJ (on), 626µJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 51ns/160ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
Renesas Electronics America Inc
CT60AM-18F#G02
Infineon Technologies
AIKW30N60CTXKSA1
IXYS
IXXH30N65B4
STMicroelectronics
STGWA40IH65DF
NTE Electronics, Inc
NTE3311
Microchip Technology
APT50GN60BG
onsemi
NGB8206ANT4G
onsemi
FGD3440G2-F085V
onsemi
HGTG40N60A4
Infineon Technologies