STO67N60DM6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 33A TOLL
$8.34
Available to order
Reference Price (USD)
1+
$8.34000
500+
$8.2566
1000+
$8.1732
1500+
$8.0898
2000+
$8.0064
2500+
$7.923
Exquisite packaging
Discount
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Optimize your power electronics with the STO67N60DM6 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STO67N60DM6 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 23.75A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL (HV)
- Package / Case: 8-PowerSFN
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