TK190A65Z,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 15A TO220SIS
$3.15
Available to order
Reference Price (USD)
1+
$3.15000
500+
$3.1185
1000+
$3.087
1500+
$3.0555
2000+
$3.024
2500+
$2.9925
Exquisite packaging
Discount
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The TK190A65Z,S4X from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TK190A65Z,S4X offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 610µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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