TPH3205WSBQA
Transphorm
Transphorm
GANFET N-CH 650V 35A TO247-3
$22.97
Available to order
Reference Price (USD)
1+
$21.64000
10+
$20.01700
30+
$18.39400
120+
$17.09558
270+
$15.68900
510+
$15.14800
Exquisite packaging
Discount
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The TPH3205WSBQA single MOSFET from Transphorm is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TPH3205WSBQA is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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