UJ4SC075011B7S
UnitedSiC
UnitedSiC
750V/11MOHM, N-OFF SIC STACK CAS
$32.01
Available to order
Reference Price (USD)
1+
$32.01000
500+
$31.6899
1000+
$31.3698
1500+
$31.0497
2000+
$30.7296
2500+
$30.4095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UJ4SC075011B7S from UnitedSiC sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to UnitedSiC's UJ4SC075011B7S for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
- Vgs(th) (Max) @ Id: 5.5V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
Fairchild Semiconductor
FQPF2N50
STMicroelectronics
STB24N60DM2
Infineon Technologies
IPW60R190P6FKSA1
STMicroelectronics
STF15N95K5
Microchip Technology
APT56M50B2
Nexperia USA Inc.
BUK6D23-40EX
Diodes Incorporated
ZXMN10A11GTA
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ55P02A-F1-1100HF
Rohm Semiconductor
RSJ451N04FRATL
Vishay Siliconix