UPA2463T1Q-E1-AX
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 20V 6A 8HUSON
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The UPA2463T1Q-E1-AX by Renesas Electronics America Inc is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the UPA2463T1Q-E1-AX is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HUSON (2.7x2)
- Package / Case: 8-WFDFN Exposed Pad
Related Products
Infineon Technologies
IPW60R070C6FKSA1
onsemi
NDD60N550U1-35G
onsemi
RFP50N06
Infineon Technologies
BSC105N10LSFGATMA1
onsemi
FDD9409-F085
Vishay Siliconix
SI4155DY-T1-GE3
Microchip Technology
APT53N60BC6
Diodes Incorporated
DMNH10H028SK3-13
Rohm Semiconductor
RSL020P03TR
Diodes Incorporated