ZVN4306GTA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 2.1A SOT223
$1.52
Available to order
Reference Price (USD)
1,000+
$0.66000
2,000+
$0.61600
5,000+
$0.58520
10,000+
$0.56320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZVN4306GTA by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
AUIRFS8407-7TRL
Vishay Siliconix
SQD100N03-3M2L_GE3
Panasonic Electronic Components
MTM761230LBF
Fairchild Semiconductor
FQI9N50TU
EPC
EPC2202
Rohm Semiconductor
RJ1G12BGNTLL
STMicroelectronics
STU7N80K5
IXYS
IXFX140N30P
Vishay Siliconix
SQS460ENW-T1_GE3
Nexperia USA Inc.