ZXMN2A01E6TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 2.5A SOT23-6
$0.63
Available to order
Reference Price (USD)
3,000+
$0.27623
6,000+
$0.26028
15,000+
$0.24433
30,000+
$0.23316
Exquisite packaging
Discount
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The ZXMN2A01E6TA by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the ZXMN2A01E6TA is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 303 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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