2SB1260T100Q
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 80V 1A MPT3
$0.57
Available to order
Reference Price (USD)
1,000+
$0.18020
2,000+
$0.16430
5,000+
$0.15370
10,000+
$0.14840
Exquisite packaging
Discount
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Optimize your electronic systems with the 2SB1260T100Q Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the 2SB1260T100Q delivers superior performance in diverse environments. Rohm Semiconductor's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: MPT3
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