AIKW40N65DH5XKSA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 650V TO247-3
$8.56
Available to order
Reference Price (USD)
1+
$7.10000
10+
$6.41500
240+
$5.31075
720+
$4.62454
1,200+
$4.02783
Exquisite packaging
Discount
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Enhance your electronic projects with the AIKW40N65DH5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the AIKW40N65DH5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose AIKW40N65DH5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 74 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: 350µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 19ns/165ns
- Test Condition: 400V, 20A, 15Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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