BFU580GX
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 12V 11GHZ SOT223
$0.83
Available to order
Reference Price (USD)
1,000+
$0.40700
2,000+
$0.37400
5,000+
$0.35200
10,000+
$0.34760
Exquisite packaging
Discount
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Upgrade your RF circuits with the BFU580GX, a high-efficiency Bipolar Junction Transistor (BJT) from NXP USA Inc.. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The BFU580GX offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose NXP USA Inc. for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
- Gain: 10.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73
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