BUK9Y15-100E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 69A LFPAK56
$0.80
Available to order
Reference Price (USD)
1,500+
$0.56067
3,000+
$0.52329
7,500+
$0.49713
10,500+
$0.47844
Exquisite packaging
Discount
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Enhance your electronic projects with the BUK9Y15-100E,115 single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s BUK9Y15-100E,115 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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