CSD17313Q2Q1T
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 5A 6WSON
$0.95
Available to order
Reference Price (USD)
1,750+
$0.24320
Exquisite packaging
Discount
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Upgrade your designs with the CSD17313Q2Q1T by Texas Instruments, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the CSD17313Q2Q1T is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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