SI8425DB-T1-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 4WLCSP
$0.62
Available to order
Reference Price (USD)
3,000+
$0.25425
6,000+
$0.23775
15,000+
$0.22950
30,000+
$0.22500
Exquisite packaging
Discount
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The SI8425DB-T1-E1 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SI8425DB-T1-E1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-WLCSP (1.6x1.6)
- Package / Case: 4-UFBGA, WLCSP
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