FF300R12KT4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 450A 1600W
$192.08
Available to order
Reference Price (USD)
1+
$122.44000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FF300R12KT4HOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FF300R12KT4HOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FF300R12KT4HOSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 450 A
- Power - Max: 1600 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Microchip Technology
APTGL325A120D3G
Infineon Technologies
FP100R06KE3_B16
Infineon Technologies
FP25R12W2T4PB11BPSA1
Infineon Technologies
FF400R17KE4HOSA1
Infineon Technologies
FZ3600R17HP4HOSA2
Infineon Technologies
FS225R12KE4BOSA1
Infineon Technologies
FF200R06KE3HOSA1
STMicroelectronics
A2C35S12M3
Infineon Technologies
FD800R45KL3KB5NPSA1
Infineon Technologies