FF3MR12KM1PHOSA1
Infineon Technologies
Infineon Technologies
MEDIUM POWER 62MM
$951.48
Available to order
Reference Price (USD)
1+
$951.48000
500+
$941.9652
1000+
$932.4504
1500+
$922.9356
2000+
$913.4208
2500+
$903.906
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FF3MR12KM1PHOSA1 by Infineon Technologies is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the FF3MR12KM1PHOSA1 provides reliable operation under stringent conditions. Infineon Technologies's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
- Vgs(th) (Max) @ Id: 5.15V @ 168mA
- Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM
Related Products
Rohm Semiconductor
HP8M31TB1
Texas Instruments
CSD87350Q5D
Toshiba Semiconductor and Storage
SSM6L09FUTE85LF
onsemi
NTQD6968R2
Taiwan Semiconductor Corporation
TSM076NH04DCR RLG
Alpha & Omega Semiconductor Inc.
AO6808
Renesas Electronics America Inc
UPA2792AGR-E1-AT
Rohm Semiconductor
QH8KB5TCR
Rectron USA
RM10N40S8
Toshiba Semiconductor and Storage