HP8M31TB1
Rohm Semiconductor
Rohm Semiconductor
HP8M31TB1 IS LOW ON-RESISTANCE A
$2.53
Available to order
Reference Price (USD)
1+
$2.53000
500+
$2.5047
1000+
$2.4794
1500+
$2.4541
2000+
$2.4288
2500+
$2.4035
Exquisite packaging
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Choose the HP8M31TB1 from Rohm Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the HP8M31TB1 stands out for its reliability and efficiency. Rohm Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
- Power - Max: 3W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-HSOP
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