SSM6L09FUTE85LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 0.4A/0.2A US6
$0.51
Available to order
Reference Price (USD)
3,000+
$0.10260
6,000+
$0.09690
15,000+
$0.08835
30,000+
$0.08265
75,000+
$0.07980
Exquisite packaging
Discount
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Elevate your electronics with the SSM6L09FUTE85LF from Toshiba Semiconductor and Storage, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SSM6L09FUTE85LF provides the reliability and efficiency you need. Toshiba Semiconductor and Storage's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
- Power - Max: 300mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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