FGY75T120SQDN
onsemi
onsemi
IGBT 1200V 75A UFS
$12.55
Available to order
Reference Price (USD)
1+
$10.33000
10+
$9.36600
450+
$7.48127
900+
$6.85282
1,350+
$6.01493
Exquisite packaging
Discount
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Optimize your power systems with the FGY75T120SQDN Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGY75T120SQDN delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
- Power - Max: 790 W
- Switching Energy: 6.25mJ (on), 1.96mJ (off)
- Input Type: Standard
- Gate Charge: 399 nC
- Td (on/off) @ 25°C: 64ns/332ns
- Test Condition: 600V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 99 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: TO-247-3
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