HGTG30N60B3
Harris Corporation
Harris Corporation
600 V, NPT IGBT
$2.91
Available to order
Reference Price (USD)
1+
$5.83000
10+
$5.23400
450+
$4.06856
900+
$3.65071
1,350+
$3.07892
Exquisite packaging
Discount
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The HGTG30N60B3 by Harris Corporation is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTG30N60B3 delivers robust performance. Harris Corporation's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTG30N60B3 into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 220 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 208 W
- Switching Energy: 500µJ (on), 680µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 36ns/137ns
- Test Condition: 480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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