RGTV60TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.91
Available to order
Reference Price (USD)
1+
$5.11000
10+
$4.59300
25+
$4.34240
100+
$3.76350
450+
$3.57051
900+
$3.20380
1,350+
$2.70200
Exquisite packaging
Discount
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Enhance your electronic projects with the RGTV60TK65GVC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGTV60TK65GVC11 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGTV60TK65GVC11 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 33 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 76 W
- Switching Energy: 570µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 33ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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