HGT1S15N120C3
Harris Corporation
Harris Corporation
35A, 1200V, N-CHANNEL IGBT
$3.71
Available to order
Reference Price (USD)
1+
$3.71000
500+
$3.6729
1000+
$3.6358
1500+
$3.5987
2000+
$3.5616
2500+
$3.5245
Exquisite packaging
Discount
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The HGT1S15N120C3 by Harris Corporation is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Harris Corporation's reputation for quality, the HGT1S15N120C3 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
- Power - Max: 164 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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