IXYH30N170C
IXYS
IXYS
1700V/108A HIGH VOLTAGE XPT IGB
$18.66
Available to order
Reference Price (USD)
1+
$13.35000
30+
$11.22967
120+
$10.31900
510+
$8.80151
1,020+
$8.49800
Exquisite packaging
Discount
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Optimize your power systems with the IXYH30N170C Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYH30N170C delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 108 A
- Current - Collector Pulsed (Icm): 255 A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
- Power - Max: 937 W
- Switching Energy: 5.9mJ (on), 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: 28ns/150ns
- Test Condition: 850V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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